METHOD FOR ETCHING MESA ISOLATION IN ANTIMONY BASED COMPOUND SEMICONDUCTOR STRUCTURES
摘要
Antimony-based semiconductor devices are formed over a substrate structure (10) that includes an antimony-based buffer layer (24) and an antimony-based buffer cap (26). Multiple epitaxial layers (30-42) formed over the substrate structure (10) are dry etched to form device mesas (12) and the buffer cap (26) provides a desirably smooth mesa floor and electrical isolation around the mesas.
申请公布号
WO2006020355(A3)
申请公布日期
2006.05.18
申请号
WO2005US26117
申请日期
2005.07.22
申请人
NORTHROP GRUMMAN CORPORATION;NAM, PETER, S.;LANGE, MICHAEL, D.;TSAI, ROGER, S.