发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT, DRIVE CIRCUIT, AND PLASMA DISPLAY APPARATUS
摘要 A semiconductor integrated circuit (60) capable of reducing the influence of the difference in ambient temperature etc. and realizing a stable phase adjustment circuit has been disclosed. The semiconductor integrated circuit (60) comprises a delay time adjustment circuit (61) for delaying the rising edge or the falling edge of an input signal and changing the amount of delay, a comparison circuit (62) for comparing an output signal from the delay time adjustment circuit with a predetermined voltage, a high-level shift circuit (63) for shifting an output signal from the comparison circuit into a signal on the basis of an output reference voltage, and an output amplifier circuit (64) for amplifying an output signal from the high-level shift circuit and outputting a signal for driving the semiconductor device, wherein the delay time adjustment circuit (61), the comparison circuit (62), the high-level shift circuit (63), and the output amplifier circuit (64) are formed on a single chip.
申请公布号 KR20060045724(A) 申请公布日期 2006.05.17
申请号 KR20050031162 申请日期 2005.04.14
申请人 FUJITSU HITACHI PLASMA DISPLAY LIMITED 发明人 ONOZAWA MAKOTO;KISHI TOMOKATSU;OKADA YOSHINORI;HIRA MASATOSHI
分类号 G09G3/20;G09G3/288;G09G3/291;G09G3/294;G09G3/296;G09G3/298;G09G3/299;H03K5/13;H03K17/14;H03K17/687;H03K17/78;H03K19/0185 主分类号 G09G3/20
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