发明名称 |
SEMICONDUCTOR INTEGRATED CIRCUIT, DRIVE CIRCUIT, AND PLASMA DISPLAY APPARATUS |
摘要 |
A semiconductor integrated circuit (60) capable of reducing the influence of the difference in ambient temperature etc. and realizing a stable phase adjustment circuit has been disclosed. The semiconductor integrated circuit (60) comprises a delay time adjustment circuit (61) for delaying the rising edge or the falling edge of an input signal and changing the amount of delay, a comparison circuit (62) for comparing an output signal from the delay time adjustment circuit with a predetermined voltage, a high-level shift circuit (63) for shifting an output signal from the comparison circuit into a signal on the basis of an output reference voltage, and an output amplifier circuit (64) for amplifying an output signal from the high-level shift circuit and outputting a signal for driving the semiconductor device, wherein the delay time adjustment circuit (61), the comparison circuit (62), the high-level shift circuit (63), and the output amplifier circuit (64) are formed on a single chip. |
申请公布号 |
KR20060045724(A) |
申请公布日期 |
2006.05.17 |
申请号 |
KR20050031162 |
申请日期 |
2005.04.14 |
申请人 |
FUJITSU HITACHI PLASMA DISPLAY LIMITED |
发明人 |
ONOZAWA MAKOTO;KISHI TOMOKATSU;OKADA YOSHINORI;HIRA MASATOSHI |
分类号 |
G09G3/20;G09G3/288;G09G3/291;G09G3/294;G09G3/296;G09G3/298;G09G3/299;H03K5/13;H03K17/14;H03K17/687;H03K17/78;H03K19/0185 |
主分类号 |
G09G3/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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