发明名称 |
HALFTONE PHASE SHIFT MASK BLANK, HALFTONE PHASE SHIFT MASK, AND PATTERN TRANSFER METHOD |
摘要 |
In a halftone phase shift mask blank comprising a substrate, a light absorbing film, and a phase shifter film, the light absorbing film contains a metal element of Group 4A in a distribution having a higher metal element content in an upper region than in a lower region. Also provided is a halftone phase shift mask blank comprising a transparent substrate and a halftone phase shift film of a single layer or multiple layers having a preselected phase difference and transmittance, wherein at least one layer of the halftone phase shift film contains at least 90 atom% of silicon and a plurality of metal elements, typically Mo and Zr or Hf. |
申请公布号 |
KR20060045362(A) |
申请公布日期 |
2006.05.17 |
申请号 |
KR20050027099 |
申请日期 |
2005.03.31 |
申请人 |
SHIN-ETSU CHEMICAL CO., LTD.;TOPPAN PRINTING CO., LTD. |
发明人 |
YOSHIKAWA HIROKI;ISHIHARA TOSHINOBU;OKAZAKI SATOSHI;INAZUKI YUKIO;SAGA TADASHI;OKADA KIMIHIRO;IWAKATA MASAHIDE;HARAGUCHI TAKASHI;TAKAGI MIKIO;FUKUSHIMA YUICHI |
分类号 |
G03F1/00 |
主分类号 |
G03F1/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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