发明名称 |
CRYSTALLIZING METHOD, THIN-FILM TRANSISTOR MANUFACTURING METHOD, THIN-FILM TRANSISTOR, AND DISPLAY DEVICE |
摘要 |
<p>A crystallizing method of causing a phase shifter to phase-modulate a laser beam whose wavelength is 248 nm or 300 nm or more from an excimer laser unit into a laser beam with a light intensity profile having a plurality of inverted triangular peak patterns in cross section and of irradiating the pulse laser beam onto a substrate to be crystallized for crystallization. The substrate to be crystallized is such that one or more silicon oxide films which present absorption properties to the laser beam and differ in the relative proportions of Si and O are provided on a laser beam incident face.</p> |
申请公布号 |
KR20060046344(A) |
申请公布日期 |
2006.05.17 |
申请号 |
KR20050046514 |
申请日期 |
2005.06.01 |
申请人 |
ADVANCED LCD TECHNOLOGIES DEVELOPMENT CENTER CO.,LTD. |
发明人 |
HIRAMATSU MASATO;OGAWA HIROYUKI;MATSUMURA MASAKIYO |
分类号 |
H01L29/786;B23K26/06;G02F1/13;H01L21/00;H01L21/20;H01L21/26;H01L21/268;H01L21/324;H01L21/336;H01L21/42;H01L21/477;H01L21/77;H01L21/84 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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