MULTI-BIT FLASH MEMORY DEVICE AND METHOD OF OPERATING THE SAME
摘要
<p>A multi bits flash memory device and a method of operating the same are disclosed. The multi bits flash memory device includes: a stacked structure including: a first active layer with a mesa-like form disposed on a substrate; a second active layer, having a different conductivity type from the first active layer, formed on the first active layer; an active interlayer isolation layer interposed between the first active layer and the second active layer such that the first active layer is electrically isolated from the second active layer; a common source and a common drain formed on a pair of opposite side surfaces of the stacked structure; a common first gate and a common second gate formed on the other pair of opposite side surfaces of the stacked structure; a tunnel dielectric layer interposed between the first and second gates and the first and second active layers; and a charge trap layer, storing charges that tunnel through the tunnel dielectric layer, interposed between the tunnel dielectric layer and the first and second gates.</p>
申请公布号
KR20060045165(A)
申请公布日期
2006.05.17
申请号
KR20040090892
申请日期
2004.11.09
申请人
SAMSUNG ELECTRONICS CO., LTD.
发明人
KIM, WON JOO;PARK, YOON DONG;LEE, EUN HONG;SEO, SUN AE;SHIN, SANG MIN;LEE, JUNG HOON;CHANG, SEUNG HYUK