发明名称 A leakage-tolerant wide-NOR dynamic logic circuit with a strong keeper
摘要 The strong keeper 401 in a wide-NOR dynamic logic circuit is disabled briefly by a gating device 404 during the evaluation phase. The pull-down transistors 105 can thus pull down the dynamic node 104 without contention with the powerful keeper 401 which would otherwise overwhelm them. A strong keeper is required to maintain the precharged node potential because a large leakage current can flow in the large number of short-channel pull-down transistors 105. The circuit may be used in a memory array or in a wide domino-NOR gate. The keeper may comprise an inverter or a sense amplifier coupled to a feedback PMOS transistor.
申请公布号 GB2420237(A) 申请公布日期 2006.05.17
申请号 GB20050022582 申请日期 2005.11.04
申请人 SUN MICROSYSTEMS, INC. 发明人 XEUJUN YUAN;YE XIONG;PETER F LAI
分类号 H03K19/096;G11C7/06;G11C7/12 主分类号 H03K19/096
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