发明名称 |
SOLID-STATE IMAGING DEVICE AND PRODUCTION METHOD THEREOF |
摘要 |
<p>A solid-state imaging device capable of reducing the occurrence of a dark current and a pixel defect is provided. A solid-state imaging device 10 is formed in which a plurality of photoelectric conversion elements 4 are formed in a semiconductor substrate 1; circuits 5 which read out signal charge from each of the plurality of photoelectric conversion elements 4 are respectively formed on the semiconductor substrate 1; light is applied from the opposite side to the circuits 5 which read out signal charge from each of the plurality of photoelectric conversion elements; and a gettering region is provided in an element-isolation area 2 which separate the photoelectric conversion elements 4 adjacent to each other.</p> |
申请公布号 |
KR20060045444(A) |
申请公布日期 |
2006.05.17 |
申请号 |
KR20050027680 |
申请日期 |
2005.04.01 |
申请人 |
SONY CORPORATION |
发明人 |
EZAKI TAKAYUKI;HIRAYAMA TERUO;KANBE HIDEO |
分类号 |
H01L27/146;H01L31/0328;H04N5/335;H04N5/361;H04N5/367;H04N5/369;H04N5/374 |
主分类号 |
H01L27/146 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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