Integrated circuit and method of manufacturing an integrated circuit on a semiconducting substrate

摘要

Production of an integrated circuit comprises epitaxially growing a first bipolar transistor (Q1) with a first collector region (1') of first conductivity type and a second bipolar transistor (Q2) with a second collector region (1) of first conductivity type, inserting an etch stop into the first collector region and reducing the first collector region by etching. An independent claim is also included for an integrated circuit produced by the above process.