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发明名称
薄膜半导体装置之制造方法
摘要
〔课题〕提供可使非晶质半导体薄膜不产生缺陷而结晶化,而且,可谋求工程的简化之薄膜半导体装置之制造方法〔解决手段〕一种具备有藉由对含有氢之非晶质半导体薄膜5照射雷射光Lh,使半导体薄膜5结晶化的退火工程之薄膜半导体装置之制造方法,在退火工程中,藉由对半导体薄膜5以特定速度vt使照射位置移动,而对半导体薄膜5连续照射雷射光,于半导体薄膜5中,不使氢气体膨胀,从雷射光Lh的照射部将多余氢予以去除。
申请公布号
TW200616091
申请公布日期
2006.05.16
申请号
TW094128605
申请日期
2005.08.22
申请人
新力股份有限公司
发明人
町田晓夫;赤尾裕隆;龟井隆广;中尾勇
分类号
H01L21/324;H01L29/786
主分类号
H01L21/324
代理机构
代理人
林志刚
主权项
地址
日本
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