Amorphizing ion implant method for forming polysilicon emitter bipolar transistor

摘要

A method for fabricating a polysilicon emitter bipolar transistor employs a pair of ion implant methods. A first of the ion implant methods implants a portion of an intrinsic base region interposed between an extrinsic base region and a polysilicon emitter layer with an amorphizing non-active dopant. A second of the ion implant methods implants the polysilicon emitter layer with an active dopant to form a doped polysilicon emitter layer. The polysilicon emitter bipolar transistor is fabricated with enhanced performance.