Self-aligned vertical gate semiconductor device

摘要

A transistor ( 10 ) is formed in a semiconductor substrate ( 12 ) whose top surface ( 48 ) is formed with a pedestal structure ( 24 ). A conductive material ( 40 ) is disposed along a side surface ( 28 ) of the pedestal structure to self-align an edge of a first conduction electrode ( 45 ) of the transistor. A dielectric spacer ( 55 ) is formed along a side surface ( 49 ) of the conductive material to self-align a contact area ( 56 ) of the first conduction electrode.