发明名称 |
Quartz damage repair method for high-end mask |
摘要 |
A method is provided for repairing photolithographic exposure masks. A focused ion-beam exposure of the surface of the exposure mask is used to purposely "damage" this surface over the area where opaque or light-blocking material is required to be present.
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申请公布号 |
US7045256(B2) |
申请公布日期 |
2006.05.16 |
申请号 |
US20030425322 |
申请日期 |
2003.04.29 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
CHEN SAME-TING;LIN ZY YING |
分类号 |
G03F9/00;G03C5/00;G03F1/00 |
主分类号 |
G03F9/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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