发明名称 |
Image sensor and image sensor integrated type active matrix type display device |
摘要 |
To fabricate an active matrix type display device integrated with an image sensor at a low cost and without complicating process, an image sensor laminated with TFT and a light receiving unit is formed on a light receiving matrix, a display matrix is arranged with TFT and pixel electrodes on a matrix and formed with an electrode layer functioning as a black matrix, a lower electrode of the light receiving unit is formed by a starting film the same as that of the black matrix, a terminal for fixing potential of an upper electrode is formed by starting films the same as those of a signal line, the electrode layer or pixel electrodes and the terminals function also as shield electrodes for a side face of the light receiving unit since potential thereof is fixed.
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申请公布号 |
US7046282(B1) |
申请公布日期 |
2006.05.16 |
申请号 |
US20000156461 |
申请日期 |
1998.09.18 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
ZHANG HONGYONG;SAKAKURA MASAYUKI;SATOU YURIKA |
分类号 |
H01L29/786;H04N3/14;H01L21/336;H01L21/77;H01L21/84;H01L27/146 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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