发明名称 Semiconductor device and method of manufacturing same
摘要 A semiconductor device includes a metal block, a semiconductor element on the metal block, an insulation layer on the metal block opposite the semiconductor element, a bonding material between the semiconductor element and the metal block, and a resin package configured to seal the semiconductor element and the metal block while uncovering the insulating layer. The bonding material has a higher heat conduction than the insulation layer, and the insulation layer has a higher heat conduction than the resin package.
申请公布号 US7045907(B2) 申请公布日期 2006.05.16
申请号 US20050239095 申请日期 2005.09.30
申请人 MITSUBISHI DENKI KABUSHIKI KAISHA 发明人 SHINOHARA TOSHIAKI
分类号 H01L23/28;H01L23/29;H01L23/433;H01L23/495;H01L23/50;H01L25/04;H01L25/07;H01L25/18 主分类号 H01L23/28
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