发明名称 |
Method and apparatus for selectively altering dielectric properties of localized semiconductor device regions |
摘要 |
A method for selectively altering dielectric properties of a semi-conductor device. In an exemplary embodiment, the method includes applying energy to a local region of interest, the local region of interest including a thermally alterable dielectric such that said heating caused by the applied energy causes a dielectric constant of the thermally alterable dielectric to change. |
申请公布号 |
US7045472(B2) |
申请公布日期 |
2006.05.16 |
申请号 |
US20040709313 |
申请日期 |
2004.04.28 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
COONEY, III EDWARD C.;MOTSIFF WILLIAM T. |
分类号 |
H01L21/31;H01L21/26;H01L21/316;H01L21/336;H01L21/469;H01L21/768;H01L23/522;H01L23/532 |
主分类号 |
H01L21/31 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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