发明名称 Method and apparatus for selectively altering dielectric properties of localized semiconductor device regions
摘要 A method for selectively altering dielectric properties of a semi-conductor device. In an exemplary embodiment, the method includes applying energy to a local region of interest, the local region of interest including a thermally alterable dielectric such that said heating caused by the applied energy causes a dielectric constant of the thermally alterable dielectric to change.
申请公布号 US7045472(B2) 申请公布日期 2006.05.16
申请号 US20040709313 申请日期 2004.04.28
申请人 INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 COONEY, III EDWARD C.;MOTSIFF WILLIAM T.
分类号 H01L21/31;H01L21/26;H01L21/316;H01L21/336;H01L21/469;H01L21/768;H01L23/522;H01L23/532 主分类号 H01L21/31
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