发明名称 |
Method for making a semiconductor device with a high-k gate dielectric and a conductor that facilitates current flow across a P/N junction |
摘要 |
A method for making a semiconductor device is described. That method comprises forming on a substrate a first gate dielectric layer that has a first substantially vertical component, then forming a first metal layer on the first gate dielectric layer. After forming on the substrate a second gate dielectric layer that has a second substantially vertical component, a second metal layer is formed on the second gate dielectric layer. In this method, a conductor is formed that contacts both the first metal layer and the second metal layer.
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申请公布号 |
US7045428(B2) |
申请公布日期 |
2006.05.16 |
申请号 |
US20040855635 |
申请日期 |
2004.05.26 |
申请人 |
INTEL CORPORATION |
发明人 |
BRASK JUSTIN K.;KAVALIEROS JACK;DOCZY MARK L.;METZ MATTHEW V.;SHAH UDAY;BARNS CHRIS E.;DATTA SUMAN;TURKOT, JR. ROBERT B.;CHAU ROBERT S. |
分类号 |
H01L21/8234;H01L21/00;H01L21/326;H01L21/336;H01L21/479;H01L21/768;H01L21/8238;H01L21/84 |
主分类号 |
H01L21/8234 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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