发明名称 Semiconductor device fabrication method
摘要 In a semiconductor device fabrication method using a fluidic self-assembly technique in which in a liquid, a plurality of semiconductor elements are mounted in a self-aligned manner on a substrate with a plurality of recessed portions formed therein, protruding potions that are inserted in the respective recessed portions of the substrate are formed in the lower portions of the respective semiconductor elements, the liquid in which the semiconductor elements have been spread is poured over the substrate intermittently, and the substrate is rotated in a period of time in which the liquid is not poured.
申请公布号 US7045446(B2) 申请公布日期 2006.05.16
申请号 US20040840422 申请日期 2004.05.07
申请人 MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 发明人 ONOZAWA KAZUTOSHI;UEDA DAISUKE;TOJO TOMOAKI
分类号 H01L21/20;H01S5/022;H01L21/00;H01L21/36;H01L21/98 主分类号 H01L21/20
代理机构 代理人
主权项
地址