| 发明名称 |
Semiconductor device and manufacturing method thereof |
| 摘要 |
There is presented a structure in which outlines of a metal interconnection 111 that is laid in an interlayer insulating film are covered with a barrier metal film 110. As the material for the barrier metal film 110, TaN or the like is utilized.
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| 申请公布号 |
US7045898(B2) |
申请公布日期 |
2006.05.16 |
| 申请号 |
US20030438887 |
申请日期 |
2003.05.16 |
| 申请人 |
NEC ELECTRONICS CORPORATION |
发明人 |
USAMI TATSUYA |
| 分类号 |
H01L23/48;H01L23/52;H01L21/3205;H01L21/768;H01L23/522;H01L29/40 |
主分类号 |
H01L23/48 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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