| 摘要 |
Disclosed are a chain gate line structure of a semiconductor device, and a method for manufacturing the same. The semiconductor device having a gate line structure comprises device isolation films formed on a semiconductor substrate for defining active regions and inactive regions; stack type gate electrodes formed on top of the active regions of the semiconductor substrate; at least one layer of an interlayer insulating film formed on the entire surface of the resultant material having the stack type gate electrodes; gate contacts formed on contact holes of the interlayer insulating film and connected to the stack type gate electrodes; and chain type gate lines for connecting the gate contacts formed in the active regions arrayed in a row among a plurality of active regions on the top of the interlayer insulating film in a concave-convex type chain structure. The chain gate line structure can enlarge active regions of a cell in a longitudinal axis direction by changing gate lines of the cell from a serial array into a chain line structure by having stack type gate electrodes and chain type gate lines connected thereto, and accordingly can reduce the contact resistance of the cell.
|
