发明名称 |
Semiconductor device producing method and semiconductor device producing apparatus including forming an oxide layer and changing the impedance or potential to form an oxynitride |
摘要 |
A semiconductor device producing method using a plasma processing apparatus including a processing chamber, a substrate-supporting body which supports a substrate in the processing chamber, and a cylindrical electrode and a magnetic lines of force-forming member disposed around the processing chamber, comprises forming an oxide film on the substrate, and thereafter, by changing a high frequency impedance of the substrate-supporting body, continuously forming an oxynitride film by nitriding the oxide film by activated species of nitrogen which are activated by plasma.
|
申请公布号 |
US7045447(B2) |
申请公布日期 |
2006.05.16 |
申请号 |
US20030396323 |
申请日期 |
2003.03.26 |
申请人 |
HITACHI KOKUSAI ELECTRIC INC. |
发明人 |
OGAWA UNRYU;YAMAKADO NAOYA;TERASAKI TADASHI;YASHIMA SHINJI |
分类号 |
H01L21/3205;H01L21/31;H01L21/316;H01L21/318;H01L21/469;H01L21/4763 |
主分类号 |
H01L21/3205 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|