发明名称 |
Three dimensional high aspect ratio micromachining |
摘要 |
Multi-level structures are formed in a semiconductor substrate by first forming a pattern of lines or structures of different widths. Width information on the pattern is decoded by processing steps into level information to form a MEMS structure. The pattern is etched to form structures having a first floor. The structures are oxidized until structures of thinner width are substantially fully oxidized. A portion of the oxide is then etched to expose the first floor. The first floor is then etched to form a second floor. The oxide is then optionally removed, leaving a multi-level structure. In one embodiment, high aspect ratio comb actuators are formed using the multi-level structure process.
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申请公布号 |
US7045466(B2) |
申请公布日期 |
2006.05.16 |
申请号 |
US20030607838 |
申请日期 |
2003.06.27 |
申请人 |
CORNELL RESEARCH FOUNDATION, INC. |
发明人 |
SUBRAMANIAN KANAKASABAPATHI;HUANG XIAOJUN T.;MACDONALD NOEL C. |
分类号 |
H01L21/302;H01L21/308 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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地址 |
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