发明名称 |
Method for making a semiconductor device including a superlattice and adjacent semiconductor layer with doped regions defining a semiconductor junction |
摘要 |
A method for making a semiconductor device may include forming a superlattice comprising a plurality of stacked groups of layers. Each group of layers of the superlattice may include a plurality of stacked base silicon monolayers defining a base silicon portion and an energy band-modifying layer thereon. The energy band-modifying layer may include at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base silicon portions. The method may further include forming a semiconductor layer adjacent the superlattice and comprising at least one first region therein including a first conductivity type dopant. At least one second region may be formed in the superlattice including a second conductivity type dopant to define, with the at least one first region, at least one semiconductor junction.
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申请公布号 |
US7045377(B2) |
申请公布日期 |
2006.05.16 |
申请号 |
US20050096828 |
申请日期 |
2005.04.01 |
申请人 |
RJ MEARS, LLC |
发明人 |
MEARS ROBERT J.;STEPHENSON ROBERT JOHN |
分类号 |
H01L21/00;H01L21/8238;H01L29/10;H01L29/15;H01L29/78 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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