发明名称 |
Method of manufacturing a current-perpendicular-to-plane magnetoresistive device with oxidized free layer side regions |
摘要 |
A current-perpendicular-to the-plane (CPP) magnetoresistive device, such as a magnetic tunnel junction (MTJ), is formed by patterning a capping layer (e.g., using resist) in the shape of a central region of an underlying free ferromagnetic layer that in turn resides over additional layers of the MTJ. Side regions of the capping layer are removed by ion milling or etching down into the free ferromagnetic layer. Unmasked side regions of the ferromagnetic layer are then oxidized to render them locally non-ferromagnetic and electrically insulating.
|
申请公布号 |
US7043823(B2) |
申请公布日期 |
2006.05.16 |
申请号 |
US20040869590 |
申请日期 |
2004.06.15 |
申请人 |
IBM |
发明人 |
CHILDRESS JEFFREY R.;DOBISZ ELIZABETH A.;FONTANA, JR. ROBERT E.;HO KUOK SAN;TSANG CHING HWA;NGUYEN SON VAN |
分类号 |
G11B5/127;B44C1/22;G01R33/09;G11B5/31;G11B5/39;H01L43/08;H01L43/12 |
主分类号 |
G11B5/127 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|