发明名称 Semiconductor integrated circuit and magnetic storage device using the same
摘要 The present invention provides a semiconductor integrated circuit capable of reducing a circuit area and a magnetic storage device using the same. The circuit in the present invention is provided with a single-stage output transistor for supplying write current to a magnetic head, a current source for outputting reference current of the write current, a diode-connected NMOS transistor for converting the current to gate voltage and having a certain device size ratio to the output transistor, a regulator circuit for transmitting gate voltage of the NMOS transistor and reducing output impedance, and a CMOS circuit for setting power supply voltage to an output of the regulator circuit and controlling the gate voltage of the output transistor. Then, this circuit is applied as a write circuit in a magnetic storage device.
申请公布号 US7046468(B2) 申请公布日期 2006.05.16
申请号 US20050030067 申请日期 2005.01.07
申请人 HITACHI, LTD. 发明人 YAMASHITA HIROKI;YAGYU MASAYOSHI;YUUKI FUMIO;KAWASHIMO TATSUYA
分类号 G11B5/02;G11B5/09;G11B5/00;G11B5/012;G11B5/39;G11C16/06;H03K17/00;H03K17/687 主分类号 G11B5/02
代理机构 代理人
主权项
地址