发明名称 MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE AND SEMICONDUCTOR CHIP
摘要 A manufacturing method for a semiconductor device includes: the step of preparing a semiconductor chip which is provided with a functional element formed on a front surface side of a semiconductor substrate, a feedthrough electrode which is placed within a through hole that penetrates the semiconductor substrate, a front surface side connection member which protrudes from the front surface, and a rear surface side connection member which has a joining surface within a recess that is formed in a rear surface; the step of preparing a solid-state device where a solid-state device side connection member for connection to the front surface side connection member is formed on one surface; and the joining step of making the front surface of the semiconductor chip face the first surface of the solid-state device by holding the rear surface of the semiconductor chip, and of joining the front surface side connection member to the solid-state device side connection member.
申请公布号 KR20060044637(A) 申请公布日期 2006.05.16
申请号 KR20050024190 申请日期 2005.03.23
申请人 ROHM CO., LTD.;RENESAS TECHNOLOGY CORP.;SANYO ELECTRIC CO., LTD. 发明人 TANIDA KAZUMASA;UMEMOTO MATSUO;AKIYAMA YUKIHARU
分类号 H01L23/12;H01L25/18;H01L21/70;H01L23/48;H01L25/065;H01L25/07;H01L27/00 主分类号 H01L23/12
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