发明名称 |
MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE AND SEMICONDUCTOR CHIP |
摘要 |
A manufacturing method for a semiconductor device includes: the step of preparing a semiconductor chip which is provided with a functional element formed on a front surface side of a semiconductor substrate, a feedthrough electrode which is placed within a through hole that penetrates the semiconductor substrate, a front surface side connection member which protrudes from the front surface, and a rear surface side connection member which has a joining surface within a recess that is formed in a rear surface; the step of preparing a solid-state device where a solid-state device side connection member for connection to the front surface side connection member is formed on one surface; and the joining step of making the front surface of the semiconductor chip face the first surface of the solid-state device by holding the rear surface of the semiconductor chip, and of joining the front surface side connection member to the solid-state device side connection member. |
申请公布号 |
KR20060044637(A) |
申请公布日期 |
2006.05.16 |
申请号 |
KR20050024190 |
申请日期 |
2005.03.23 |
申请人 |
ROHM CO., LTD.;RENESAS TECHNOLOGY CORP.;SANYO ELECTRIC CO., LTD. |
发明人 |
TANIDA KAZUMASA;UMEMOTO MATSUO;AKIYAMA YUKIHARU |
分类号 |
H01L23/12;H01L25/18;H01L21/70;H01L23/48;H01L25/065;H01L25/07;H01L27/00 |
主分类号 |
H01L23/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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