发明名称 Semiconductor device and method for manufacturing the same
摘要 A method for manufacturing a semiconductor substrate including a mask aligning trench. The method includes forming the mask aligning trench and an element partitioning trench. The element partitioning and mask aligning trenches are filled with insulation. The insulation in the element partitioning trench is masked and the insulation in the mask aligning trench is etched. As a result, a residue of the insulation in the mask aligning trench is below the upper edge of the mask aligning trench. The mask aligning trench is easily detected. Thus, positioning a patterning mask on the substrate can be performed accurately.
申请公布号 US7045434(B2) 申请公布日期 2006.05.16
申请号 US20010908941 申请日期 2001.07.20
申请人 SANYO ELECTRIC CO., LTD. 发明人 HIRASE MASAKI;SHIMADA SATORU
分类号 H01L21/76;H01L21/027;H01L21/762;H01L23/544 主分类号 H01L21/76
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