| 摘要 |
Conventionally, semiconductor devices wherein a flexible sheet with a conductive pattern was employed as a supporting substrate, a semiconductor element was mounted thereon, and the ensemble was molded have been developed. In this case, problems occur that a multilayer wiring structure cannot be formed and warping of the insulating resin sheet in the manufacturing process is prominent. In order to solve these problems, a laminated plate ( 10 ) in which a thin first conductive film ( 11 ) and a thick second conductive film ( 12 ) have been laminated via a third conductive film ( 13 ) is used. In a step for forming a conductive wiring layer ( 11 A) by etching the first conductive film ( 11 ), etching depth can be controlled by stopping etching at the third conductive film ( 13 ). Accordingly, forming the first conductive film ( 11 ) to be thin makes it possible to form the conductive wiring layer ( 11 A) into a fine pattern.
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