发明名称 Light emitting device, semiconductor device, and method of fabricating the devices
摘要 A semiconductor device in which degradation due to permeation of water and oxygen can be limited, e.g., a light emitting device having an organic light emitting device (OLED) formed on a plastic substrate, and a liquid crystal display using a plastic substrate. A layer to be debonded, containing elements, is formed on a substrate, bonded to a supporting member, and debonded from the substrate. A thin film is thereafter formed on the debonded layer. The debonded layer with the thin film is adhered to a transfer member. Cracks caused in the debonded layer at the time of debonding are thereby repaired. As the thin film in contact with the debonded layer, a film having thermal conductivity, e.g., film of aluminum nitride or aluminum nitroxide is used. This film dissipates heat from the elements and has the effect of preventing deformation and change in quality of the transfer member, e.g., a plastic substrate.
申请公布号 US7045438(B2) 申请公布日期 2006.05.16
申请号 US20020199496 申请日期 2002.07.22
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 YAMAZAKI SHUNPEI;TAKAYAMA TORU;MARUYAMA JUNYA;MIZUKAMI MAYUMI
分类号 H01L21/30;H05B33/22;G02F1/1333;G09F9/30;G09F9/35;H01L21/02;H01L21/314;H01L21/316;H01L21/318;H01L21/336;H01L27/12;H01L27/32;H01L29/786;H01L51/40;H01L51/50;H01L51/52 主分类号 H01L21/30
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