发明名称 Conductive etch stop for etching a sacrificial layer
摘要 In one embodiment, a method of forming a metallic electrode comprises depositing a metal layer over a surface (e.g., substrate) and thermally processing the metal layer to form a conductive metallized ceramic. The metal layer may be deposited by sputtering and thermally processed by rapid thermal processing, for example. Among other advantages, embodiments of the present invention allow for the formation of conductive metallized ceramics, such as titanium-nitride, without the use of relatively expensive deposition tools.
申请公布号 US7045381(B1) 申请公布日期 2006.05.16
申请号 US20040788565 申请日期 2004.02.27
申请人 SILICON LIGHT MACHINES CORPORATION 发明人 LUNCEFORD BRENT D.;BEACH GREGORY;HUNTER JAMES A.
分类号 H01L21/00 主分类号 H01L21/00
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