| 摘要 |
A semiconductor device ( 1 ) comprising electrodes formed on a semiconductor chip ( 2 ) and bumps ( 3 ) which consist of a low melting point metal ball spherically formed and having a given size and which are adhesive bonded to the electrodes ( 5 ). The electrodes ( 5 ) are formed from an electrode material of Cu or a Cu alloy, Al or an Al alloy, or Au or a Au alloy. When the electrode material is composed of Al or an Al alloy, the electrodes contain, on the electrode material layer of Al or an Al alloy, at least one layer ( 6 ) composed of a metal or metal alloy (preferably a metal selected form Ti, W, Ni, Cr, Au, Pd, Cu, Pt, Ag, Sn or Pb, or an alloy of these metals) having a melting point higher than the electrode material. The low melting point metal balls ( 3 ) are adhesive bonded to the electrodes ( 5 ) preferably with a flux. The low melting point metal balls ( 3 ) adhesive bonded to the respective electrodes ( 3 ) may also be reflowed to form semispherical bumps ( 10 ) before use.
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