发明名称 THIN FILM TRANSISTOR ARRAY PANEL AND METHOD FOR MANUFACTURING THE SAME
摘要 Disclosed is a thin film transistor array panel comprising an insulating substrate and a gate line formed on the insulating substrate. The gate line includes a first metal layer that contains aluminum (Al), a first cover layer formed on the gate line and a gate insulating layer formed on the cover layer. A semiconductor layer is provided on a predetermined portion of the gate insulating layer and a data line is formed on the gate insulating layer and the semiconductor layer. The semiconductor layer includes a source electrode, a drain electrode spaced apart from the source electrode by a predetermined distance. A pixel electrode connected to the electrode is provided.
申请公布号 KR20060042425(A) 申请公布日期 2006.05.15
申请号 KR20040090959 申请日期 2004.11.09
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 JEONG, CHANG OH;CHO, BEOM SEOK
分类号 G02F1/136 主分类号 G02F1/136
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