HALFTONE PHASE SHIFT MASK BLANK, HALFTONE PHASE SHIFT MASK AND THEIR PREPARATION

摘要

In a halftone phase shift mask blank comprising a halftone phase shift film on a substrate which is transparent to exposure light, the halftone phase shift film comprises a metal, silicon, and optionally oxygen and nitrogen. The halftone phase shift film experiences a phase difference change of up to 1 deg. and a transmittance change of up to 0.2% before and after it is exposed to light in a cumulative dose of 1 kJ/cm². The halftone phase shift film has excellent resistance to exposure light, specifically high-energy exposure light of short wavelength such as ArF or F₂ laser beam (193 or 157 nm).