发明名称 |
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF |
摘要 |
A semiconductor device according to the present invention comprises an electrode pad electrically conducted to an electric circuit formed on an element-formed surface of a silicon wafer; a wiring pattern re-wired by being electrically conducted to the electrode pad; and an oxide film formed on a surface of the wiring pattern, the oxide film being formed by subjecting the wiring pattern to oxidization. With the provision of oxide film, the semiconductor device prevents a decrease in reliability in terms of electric characteristic or the like, and also achieves reduction in fabrication cost compared to a conventional semiconductor device. |
申请公布号 |
KR20060043439(A) |
申请公布日期 |
2006.05.15 |
申请号 |
KR20050018513 |
申请日期 |
2005.03.07 |
申请人 |
SHARP KABUSHIKI KAISHA |
发明人 |
IWAZAKI YOSHIHIDE;SUMINOE SHINJI;MORI KATSUNOBU |
分类号 |
H01L21/60;H01L23/52;H01L21/3205;H01L21/44;H01L23/12;H01L23/31;H01L23/48;H01L23/485;H01L23/525;H05K3/34 |
主分类号 |
H01L21/60 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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