发明名称 METHOD FOR OPERATING AN ELECTRICAL WRITABLE AND ERASABLE MEMORY CELL AND A MEMORY DEVICE FOR ELECTRICAL MEMORIES
摘要 <p>The semi conductor memory cell is of a read write type and has a canal region (2) that operates in a first and second direction. Information is stored based upon the difference in operating voltage in the canal region. The process is not affected by cross coupling between memory cells.</p>
申请公布号 KR20060043430(A) 申请公布日期 2006.05.15
申请号 KR20050018331 申请日期 2005.03.04
申请人 INFINEON TECHNOLOGIES AG 发明人 DEPPE JOACHIM;ISLER MARK;LUDWIG CHRISTOPH;SACHSE JENS UWE;FISCHER JAN MALTE;MIKALO RICARDO PABLO
分类号 G11C16/00;G11C16/02;G11C11/56;G11C16/04;G11C16/26;G11C16/34;H01L21/8247;H01L27/10;H01L27/115;H01L29/788;H01L29/792 主分类号 G11C16/00
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