发明名称 |
METHOD FOR OPERATING AN ELECTRICAL WRITABLE AND ERASABLE MEMORY CELL AND A MEMORY DEVICE FOR ELECTRICAL MEMORIES |
摘要 |
<p>The semi conductor memory cell is of a read write type and has a canal region (2) that operates in a first and second direction. Information is stored based upon the difference in operating voltage in the canal region. The process is not affected by cross coupling between memory cells.</p> |
申请公布号 |
KR20060043430(A) |
申请公布日期 |
2006.05.15 |
申请号 |
KR20050018331 |
申请日期 |
2005.03.04 |
申请人 |
INFINEON TECHNOLOGIES AG |
发明人 |
DEPPE JOACHIM;ISLER MARK;LUDWIG CHRISTOPH;SACHSE JENS UWE;FISCHER JAN MALTE;MIKALO RICARDO PABLO |
分类号 |
G11C16/00;G11C16/02;G11C11/56;G11C16/04;G11C16/26;G11C16/34;H01L21/8247;H01L27/10;H01L27/115;H01L29/788;H01L29/792 |
主分类号 |
G11C16/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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