| 摘要 |
1,215,491. Integrated circuits. MOTOROLA Inc. 11 Jan., 1968 [23 Jan., 1967; 30 Oct., 1967], No. 1551/68. Heading H1K. In an integrated circuit certain P and N- type layers are arranged and biased so as to act as a distribution system for the supply of power or signal voltages to semi-conductor devices in the circuit. The structure shown illustrates the distribution of power to the emitters and collectors of several transistors. The regions 14, 16 are reverse biased with respect to one another and together with the linking vertical channels 20, 28, 29, 30 act as a transmission line with high distributed capacitance through which power may be fed from a source 11 to the collectors 21 of the NPN transistors and to surface contacts 64, 78 for feeding the emittersthe distributed capacitance decouples the supply. (In cases in which the system is used to supply signal voltages, the capacitance has to be kept down to avoid losses.) The structure shown is formed by growing a P-type layer 16 on an N-type body 14, and by forming vertical N-type channels such as 20 by diffusion into the grown layer. After this an N-type layer 21 is grown which is to form the collector regions, and P-type vertical channels 28, 29, 30 are formed in this layer by diffusion. Emitter, base and collector contacts are then applied as are electrodes 64, 65, 78 for giving access to the power supply.
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