发明名称 |
SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD FOR THE SAME |
摘要 |
<p>The present invention provides a semiconductor memory device including: a semiconductor substrate (100) of a first conductivity type; and a memory cell including: (i) a columnar semiconductor portion (110) formed on the substrate (100), (ii) at least two charge-storage layers (300) formed around a periphery of the columnar semiconductor portion (110) and divided in a direction vertical to the semiconductor substrate (100), and (iii) a control gate (500) that covers at least a portion of charge-storage layers (300), wherein the memory cell is capable of holding two-bit or more data. <IMAGE></p> |
申请公布号 |
KR20060043688(A) |
申请公布日期 |
2006.05.15 |
申请号 |
KR20050021753 |
申请日期 |
2005.03.16 |
申请人 |
MASUOKA FUJIO;SHARP KABUSHIKI KAISHA |
发明人 |
MASUOKA FUJIO;HORII SINJI;TANIGAMI TAKUJI;YOKOYAMA TAKASHI |
分类号 |
H01L27/115;H01L21/336;H01L21/8247;H01L29/76;H01L29/788;H01L29/792;H01L29/94;H01L31/062;H01L31/113;H01L31/119 |
主分类号 |
H01L27/115 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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