发明名称 Domain controlled piezoelectric single crystal and fabrication method therefor
摘要 A domain controlled piezoelectric single crystal having an electromechanical coupling factor k 33 ‰¥ 80% in a longitudinal vibration mode and a piezoelectric constant d 33 ‰¥ 800 pC/N, comprising an electromechanical coupling factor k 31 ‰¤ 30% in a lateral vibration mode in a direction perpendicular to the polarization direction, a piezoelectric constant -d 31 ‰¤ 300 pC/N and a frequency constant fc 31 (= fr·L) ‰¥ 800 Hz·m which is a product of a resonance frequency fr in the lateral vibration mode relating to k 31 and a length L of the piezoelectric single crystal in a vibration direction.
申请公布号 EP1655789(A1) 申请公布日期 2006.05.10
申请号 EP20060001261 申请日期 2002.09.25
申请人 OGAWA, TOSHIO;KAWATETSU MINING CO., LTD. 发明人 OGAWA, TOSHIO;MATSUSHITA, MITSUYOSHI;TACHI, YOSHIHITO
分类号 C04B35/46;H01L41/18;C04B35/472;C30B29/32;H01L41/09;H01L41/187;H01L41/22;H01L41/257 主分类号 C04B35/46
代理机构 代理人
主权项
地址
您可能感兴趣的专利