摘要 |
A method of reading non-volatile computer memory comprises the steps of reading a first portion of non-volatile memory, evaluating a cyclic redundancy check code to determine an error, reading the associated data sector, executing an error correction routine and generating a memory sector layout table. The memory may be flash memory and preferably a multilevel cell flash device. The memory comprises a user data sector and a redundant memory area which may have first and second portions. The first portion may include data associated with the memory sector and a CRC code. The first portion may additionally contain data such as overwrite flags, logical address data, security codes, format reserve data and identifying tags. The second portion may contain an error correction code (ECC). In one embodiment the redundant memory area may be 16 bytes with a 7 byte first portion. In a second embodiment the redundant area may be 64 bytes with a 28 byte first portion. |