| 摘要 |
A semiconductor storage device having a redundancy circuit for compensating for failed memory cells, wherein an uneven distribution of memory cell failures is effectively compensated for. The semiconductor storage device has a plurality of memory blocks each including a plurality of segments. A redundancy memory block for replacing failed data of a segment is physically provided to each of the plurality of memory blocks. Block addresses of the redundancy memory blocks are logically commonly assigned to the plurality of memory blocks.
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