Method of cleaning a semiconductor device and cleaning agent for this purpose

摘要

The invention provides a method of cleaning a semiconductor device with a semiconductor body (10) on whose surface are present an insulating layer (4) and a conductive layer (6,7) of a material comprising aluminum. As cleaning agent an aqueous solution of ozone and the mineral acid of hydrogen fluoride is chosen, wherein the acidity of the cleaning agent is adjusted through the addition of another mineral acid incapable of oxidation by ozone such that the conductive layer (6,7) of the material comprising aluminum is passivated during the cleaning process. This cleaning method gives excellent results as regards to continued planeness and smoothness of the conductive layer (6,7).