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发明名称
Non-volatile memory device using phase change resistor cell
摘要
申请公布号
KR100576486(B1)
申请公布日期
2006.05.10
申请号
KR20040005632
申请日期
2004.01.29
申请人
发明人
分类号
G11C13/02
主分类号
G11C13/02
代理机构
代理人
主权项
地址
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