| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a process for producing a large area gallium nitride crystal substrate having a low crystal defect density by utilizing silicon single crystal having a low dislocation density, excellent crystal quality and a large diameter as a substrate, depositing a gallium nitride seed crystal layer on the surface thereof and then forming a gallium nitride crystal layer thereon. <P>SOLUTION: An amorphous layer containing boron and phosphorus is formed on the surface of a silicon single crystal substrate, a boron phosphide crystal layer is formed on the amorphous layer, a gallium nitride seed crystal layer is grown epitaxially in vapor phase on the boron phosphide crystal layer at a temperature of 750-1200°C, and then a gallium nitride crystal layer is grown epitaxially in vapor phase on the gallium nitride seed crystal layer. Subsequently, the silicon single crystal substrate, the amorphous layer, and the boron phosphide crystal layer are removed thus producing a gallium nitride crystal substrate. <P>COPYRIGHT: (C)2004,JPO |
