| 发明名称 |
HIGH FREQUENCY CONTROL OF A SEMICONDUCTOR SWITCH |
| 摘要 |
<p>Resonant gate driver circuits provide for an efficient switching of, for example, a MOSFET. However, often an operation of the resonant gate driver circuit does not allow for an application where high switching frequencies are required. According to the present invention, a pre-charging of the inductor of the resonant gate drive circuit is performed. This allows for a highly energy efficient and fast operation of the MOSFET.</p> |
| 申请公布号 |
EP1654804(A1) |
申请公布日期 |
2006.05.10 |
| 申请号 |
EP20040744648 |
申请日期 |
2004.07.27 |
| 申请人 |
PHILIPS INTELLECTUAL PROPERTY & STANDARDS GMBH;KONINKLIJKE PHILIPS ELECTRONICS N.V. |
发明人 |
TOLLE, TOBIAS, GEORG;DUERBAUM, THOMAS;SAUERLAENDER, GEORG;LOPEZ, TONI |
| 分类号 |
H03K17/00;H03K17/0412;H03K17/0416;(IPC1-7):H03K17/041 |
主分类号 |
H03K17/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
