| 摘要 |
The present invention pertains to an electrolytic copper plating method characterized in employing phosphorous copper as the anode upon performing electrolytic copper plating, and performing electrolytic copper plating upon making the crystal grain size of said phosphorous copper anode 10 to 1500 mu m when the anode current density during electrolysis is 3A/dm<2> or more, and making the grain size of said phosphorous copper anode 5 to 1500 mu m when the anode current density during electrolysis is less than 3A/dm<2>. Provided are an electrolytic copper plating method and a phosphorous copper anode used in such electrolytic copper plating method capable of suppressing the generation of particles such as sludge produced on the anode side within the plating bath, and capable of preventing the adhesion of particles to a semiconductor wafer, as well as a semiconductor wafer plated with the foregoing method and anode having low particle adhesion. <IMAGE> |
