发明名称 |
SEMICONDUCTOR DEVICE |
摘要 |
A sense amplifier capable of performing high-speed data sense operation with lower power consumption using a minuscule signal from a memory cell even in a case where a memory array voltage is reduced. A plurality of drive switches for over-driving are distributively arranged in a sense amplifier area, and a plurality of drive switches for restore operation are concentratively disposed at one end of a row of the sense amplifiers. A potential for over-driving is supplied using a meshed power line circuit. Through the use of the drive switches for over-driving, initial sense operation can be performed on data line pairs with a voltage having an amplitude larger than a data-line amplitude, allowing implementation of high-speed sense operation. The distributed arrangement of the drive switched for over-driving makes it possible to dispersively supply current in sense operation, thereby reducing a difference in sense voltage with respect to far and near positions of the sense amplifiers. <IMAGE> |
申请公布号 |
EP1164595(A4) |
申请公布日期 |
2006.05.10 |
申请号 |
EP20000902864 |
申请日期 |
2000.02.09 |
申请人 |
HITACHI, LTD. |
发明人 |
TAKEMURA, RIICHIRO;ITOH, KIYOO;SEKIGUCHI, TOMONORI;SAKATA, TAKESHI;KIMURA, KATSUTAKA |
分类号 |
G11C11/409;G11C5/06;G11C7/06;G11C11/401;G11C11/406;G11C11/4074;G11C11/4091;H01L21/8242;H01L27/108 |
主分类号 |
G11C11/409 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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