发明名称 |
Methods of fabricating flash memory devices having self aligned shallow trench isolation structures |
摘要 |
Flash memory devices are provided including an integrated circuit substrate and a stack gate structure on the integrated circuit substrate. A trench isolation region is provided on the integrated circuit substrate adjacent the stack gate structure. A portion of the stack gate structure adjacent a trench sidewall of the trench isolation region may include a first nitrogen doped layer.
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申请公布号 |
US7041554(B2) |
申请公布日期 |
2006.05.09 |
申请号 |
US20030455679 |
申请日期 |
2003.06.05 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE CHANG-HYUN;PARK DONG-GUN |
分类号 |
H01L21/336;H01L21/76;H01L21/28;H01L21/8247;H01L27/115;H01L29/423;H01L29/788;H01L29/792 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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