发明名称 Method for revealing crystalline defects and/or stress field defects at the molecular adhesion interface of two solid materials
摘要 A process for permitting defects or stresses in a structure to be revealed, including (a) securing by molecular bonding of a face of a first element containing crystalline material with a face of a second element containing crystalline material, so that the faces have offset crystalline lattices, the securing causing the formation of a lattice of crystalline defects and/or stress fields in a crystalline zone next to the securing interface, and (b) reducing the thickness of one of the elements until at least a thin film is obtained which adheres to the other element, along the securing interface to form the structure, the thickness of the thin film being such that its free face does not reveal the crystalline defect lattice and/or the stress fields, but allowing to perform (c) treatment of the thin film resulting in that its free face reveals the crystalline defect lattice and/or the stress fields.
申请公布号 US7041227(B2) 申请公布日期 2006.05.09
申请号 US20030398630 申请日期 2003.10.27
申请人 COMMISSARIAT A L'ENERGIE ATOMIQUE 发明人 FOURNEL FRANCK;MORICEAU HUBERT;MAGNEA NOEL
分类号 B82B3/00;H01L21/00;H01L21/02;H01L21/18;H01L21/306;H01L21/324;H01L27/12 主分类号 B82B3/00
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