<p>Provided is a memory device comprising a molecular adsorption layer. The memory device includes: a substrate; a source electrode and a drain electrode formed on the substrate and separated from each other; a carbon nanotube (CNT) layer electrically connected to the source electrode and the drain electrode; a memory cell contacting the CNT so as to store a charge from the CNT; and a gate electrode formed on the memory cell, wherein the memory cell comprises: a first insulating layer formed on the CNT; a molecular adsorption layer which is formed on the first insulating layer and acts as a charge storage layer; and a second insulating layer formed on the molecular adsorption layer.</p>
申请公布号
KR20060039717(A)
申请公布日期
2006.05.09
申请号
KR20040088916
申请日期
2004.11.03
申请人
SAMSUNG ELECTRONICS CO., LTD.
发明人
PARK, NOE JUNG;KIM, KWANG HEE;KANG, DONG HUN;HYUN, JAE WOONG;HONG, KI HA