发明名称 |
Laser annealing method and laser annealing device |
摘要 |
A laser-annealing method includes the steps of a first step of cleaning a non-monocrystal silicon film formed on a substrate, and a second step of laser-annealing the non-monocrystal silicon film in an atmosphere containing oxygen therein, wherein the first and second steps are conducted continuously without being exposed to the air. Also, a laser-annealing device includes a cleaning chamber, and a laser irradiation chamber, wherein a substrate to be processed is transported between the cleaning chamber and the laser irradiation chamber without being exposed to the air.
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申请公布号 |
US7041580(B2) |
申请公布日期 |
2006.05.09 |
申请号 |
US20010025322 |
申请日期 |
2001.12.18 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
KUSUMOTO NAOTO;TAKAYAMA TORU;YONEZAWA MASATO |
分类号 |
H01L21/20;H01L29/786;H01L21/00;H01L21/336 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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