发明名称 |
Image sensor and method of manufacturing the same |
摘要 |
An image sensor has a CdTe plate, a plurality of hole-type electrodes, and a voltage-applying unit. The hole-type electrodes are arranged at predetermined intervals in the direction of thickness. The voltage-applying unit applies a voltage to the hole-type electrodes. One of the electrodes is not adjacent to any other electrode and is used as an anode. The remaining electrodes are used as cathodes. A sensor-element array is provided on the detecting surface of the image sensor. The array comprises a plurality of sensor elements arranged in the form of a matrix. Each sensor element comprises an anode, a plurality of cathodes, and CdTe lying between the anode and the cathodes.
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申请公布号 |
US7042008(B2) |
申请公布日期 |
2006.05.09 |
申请号 |
US20030636616 |
申请日期 |
2003.08.08 |
申请人 |
JAPAN AS REPRESENTED BY THE DIRECTOR-GENERAL OF THE INSTITUTE OF SPACE AND ASTRONAUTICAL SCIENCE |
发明人 |
KURODA YOSHIKATSU;TAKAHASHI TADAYUKI;MIZUNO YASUSHI |
分类号 |
H01L27/14;H01L31/0376;G01T1/24;H01L27/146;H01L31/0296;H04N5/32 |
主分类号 |
H01L27/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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