发明名称 Image sensor and method of manufacturing the same
摘要 An image sensor has a CdTe plate, a plurality of hole-type electrodes, and a voltage-applying unit. The hole-type electrodes are arranged at predetermined intervals in the direction of thickness. The voltage-applying unit applies a voltage to the hole-type electrodes. One of the electrodes is not adjacent to any other electrode and is used as an anode. The remaining electrodes are used as cathodes. A sensor-element array is provided on the detecting surface of the image sensor. The array comprises a plurality of sensor elements arranged in the form of a matrix. Each sensor element comprises an anode, a plurality of cathodes, and CdTe lying between the anode and the cathodes.
申请公布号 US7042008(B2) 申请公布日期 2006.05.09
申请号 US20030636616 申请日期 2003.08.08
申请人 JAPAN AS REPRESENTED BY THE DIRECTOR-GENERAL OF THE INSTITUTE OF SPACE AND ASTRONAUTICAL SCIENCE 发明人 KURODA YOSHIKATSU;TAKAHASHI TADAYUKI;MIZUNO YASUSHI
分类号 H01L27/14;H01L31/0376;G01T1/24;H01L27/146;H01L31/0296;H04N5/32 主分类号 H01L27/14
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